US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Gate structures of semiconductor devices and fabrication methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,831, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate structures of semiconductor devices and fabrication methods thereof" was invented by Hung-Ju Chou (Hsinchu, Taiwan), Chih-Chung Chang (Nantou County, Taiwan) and Yao-Hsuan Lai (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes depositing a dummy material stack over a fin, patterning a top portion of the dummy material stack in a first etching process, patterning a middle portion of the dummy material stack in a second etching process, patterning a bottom portion of the...