ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,073, issued on May 20, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"RRAM circuit" was invented by Chung-Cheng Chou (Hsinchu, Taiwan), Zheng-Jun Lin (Hsinchu, Taiwan) and Pei-Ling Tseng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random-access memory (RRAM) circuit includes a current source configured to output a first current, a first n-type transistor including a first drain terminal configured to receive the first current, an RRAM device, second and third n-type transistors including respective second and third drain terminals coupled to an output terminal of the RRAM device, a...