US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Through substrate via landing on front end of line structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,499, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Through substrate via landing on front end of line structure" was invented by Chieh-En Chen (Tainan City, Taiwan), Chen-Hsien Lin (Tainan City, Taiwan), Shyh-Fann Ting (Tainan City, Taiwan) and Dun-Nian Yaung (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The problem of connecting a TSV to a BEOL metal interconnect structure without damaging the BEOL metal interconnect structure is solved by landing the TSV on a metal coupling structure formed during FEOL processing. The metal coupling structure is produced in accordance with de...