US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,274, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same" was invented by Feng-Chien Hsieh (Pingtung, Taiwan), Yun-Wei Cheng (Taipei, Taiwan), Wei-Li Hu (Tainan, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan) and Hsin-Chi Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a photodetector, which includes a substrate semiconductor layer having a doping of a first conductivity type, a second-conductivity-type photodiode layer that forms a p-n junction with t...