ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,603, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of formation" was invented by Shahaji B. More (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide a nanostructure transistor and methods of formation. The nanostructure transistor includes concave-shaped regions at ends of a plurality of channel layers. The nanostructure transistor further includes convex-shaped portions of an epitaxial material, included as part of a source/drain region of the nanostructure transistor, that extend into the concave-shaped reg...