ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,604, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Multi-gate device and related methods" was invented by Shih-Hao Lin (Hsinchu, Taiwan), Chong-De Lien (Taoyuan, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Chih-Yu Hsu (Hsinchu County, Taiwan), Ming-Shuan Li (Hsinchu County, Taiwan) and Hsin-Wen Su (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes providing a fin extending from a substrate in a device type region, where the fin includes a plurality of semiconductor channel layers. In some embodiments, the method further includes forming a g...