US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 13 for "Integrated circuit structure and method with hybrid orientation for FinFET" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,640, issued on May 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuit structure and method with hybrid orientation for FinFET" was invented by Tzer-Min Shen (Hsinchu, Taiwan), Zhiqiang Wu (Hsinchu County, Taiwan), Chung-Cheng Wu (Hsin-Chu County, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Min Cao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; ...