US Patent Issued to Taiwan Semiconductor Manufacturing on May 13 for "Field plate structure to enhance transistor breakdown voltage" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,620, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field plate structure to enhance transistor breakdown voltage" was invented by Chia-Cheng Ho (Hsinchu, Taiwan), Ming-Ta Lei (Hsin-Chu, Taiwan) and Yu-Chang Jong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a field plate. A gate structure overlies a substrate between a source region and a drain region. A drift region is disposed laterally between the gate structure and the drain region. A first dielectric layer overlies the substrate. A...