ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,097, issued on May 13, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Bypass structure" was invented by Eason Hsieh (Hsinchu, Taiwan), Fei-Lung Lai (New Taipei, Taiwan) and Kuei-Sung Chang (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting ...