ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,504, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Transistors with varying width nanosheet" was invented by Yi-Hsiung Lin (Zhubei City, Taiwan), Yi-Hsun Chiu (Zhubei City, Taiwan), Shang-Wen Chang (Jhubei City, Taiwan), Ching-Wei Tsai (Hsinchu City, Taiwan), Yu-Xuan Huang (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated circuit. In one implementation, the integrated circuit may include a semiconductor substrate; at least one source region comprising a fir...