US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Semiconductor structure including gate spacer layer and dielectric layer having portion lower than top surface of gate spacer layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,489, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure including gate spacer layer and dielectric layer having portion lower than top surface of gate spacer layer" was invented by Hong-Chih Chen (Changhua County, Taiwan), Ta-Chun Lin (Hsinchu, Taiwan) and Jhon-Jhy Liaw (Zhudong, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a gate structure formed over a substrate, and a source/drain (S/D) structure formed adjacent to the gate structure. The semicondu...