US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Semiconductor device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,458, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device" was invented by Tzu-Yu Chen (Kaohsiung City, Taiwan), Sheng-Hung Shih (Hsinchu City, Taiwan), Fu-Chen Chang (New Taipei City, Taiwan), Kuo-Chi Tu (Hsinchu City, Taiwan), Wen-Ting Chu (Kaohsiung City, Taiwan) and Alexander Kalnitsky (San Francisco).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the botto...