US Patent Issued to Taiwan Semiconductor Manufacturing on March 31 for "Multi-tier deep trench capacitor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,460, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multi-tier deep trench capacitor and methods of forming the same" was invented by Tao-Cheng Liu (Hsinchu City, Taiwan) and Ying-Hsun Chen (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first-tier capacitor assembly is formed, which includes a first alternating layer stack embedded within a first substrate and including at least two first metallic electrode layers interlaced with at least one first node dielectric layer, and first metallic bonding pads located on a first front surface. A second-tier capacitor assembly is f...