ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,494, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Multi-gate device and related methods" was invented by Shi Ning Ju (Hsinchu City, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Ching-Wei Tsai (Hsinchu City, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes providing a first fin in a first device type region and a second fin in a second device type region. Each of the first and second fins include a plurality of semiconductor channel layers. A two-step recess of an S...