ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,632, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of implanting semiconductor donor substrate and method of manufacturing semiconductor-on-insulator structure" was invented by Su-Chun Yang (Hsinchu County, Taiwan), Jui Hsuan Tsai (Taipei City, Taiwan), Jih-Churng Twu (Hsinchu County, Taiwan), Chung-Shi Liu (Hsinchu City, Taiwan) and Chen-Hua Yu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of a semiconductor-on-insulator structure includes the following steps. A semiconductor donor substrate is provided. A first implantation process is performed to form an...