US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Method of forming opening in passivation layer and structures thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,712, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming opening in passivation layer and structures thereof" was invented by Chung-Hao Su (Hsinchu City, Taiwan), Wen-Chiung Tu (New Taipei City, Taiwan), Hsing-Hsiang Wang (Hsinchu, Taiwan), Chen-Chiu Huang (Taichung City, Taiwan), Hsiang-Ku Shen (Hsinchu City, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method including depositing a passivation layer over an upper contact feature. In some embodiments, a polyimide (PI) layer is formed over the passivation lay...