US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Ferroelectric tunnel junction structure with L-shaped spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,454, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric tunnel junction structure with L-shaped spacers" was invented by Tzu-Yu Chen (Kaohsiung, Taiwan), Kuo-Chi Tu (Hsinchu, Taiwan) and Sheng-Hung Shih (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric tunnel junction (FTJ) includes bottom and top electrodes and a ferroelectric layer disposed between the bottom and top electrodes. A dielectric material is disposed in a space between a peripheral area of the ferroelectric layer and a sidewall of the top electrode. At least one conformal dielectric spacer...