US Patent Issued to Taiwan Semiconductor Manufacturing on March 31 for "Dual side source/drain contact structures in semiconductor devices and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,469, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dual side source/drain contact structures in semiconductor devices and method for forming the same" was invented by Cheng-Wei Chang (Taipei City, Taiwan), Shuen-Shin Liang (Hsinchu County, Taiwan), Sung-Li Wang (Zhubei City, Taiwan), Hsu-Kai Chang (Hsinchu, Taiwan), Chia-Hung Chu (Taipei City, Taiwan), Chien-Shun Liao (New Taipei City, Taiwan) and Yi-Ying Liu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disc...