US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Contact formation method and related structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,670, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Contact formation method and related structure" was invented by Chao-Hsun Wang (Taoyuan County, Taiwan), Wang-Jung Hsueh (New Taipei City, Taiwan), Kuo-Yi Chao (Hsinchu City, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first meta...