US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 3 for "Semiconductor device with varying numbers of channel layers and method of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,641, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with varying numbers of channel layers and method of fabrication thereof" was invented by Cheng-Ting Chung (Hsinchu City, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a stack of at least two semiconductor channel layers, a gate structure wrapping each of the semiconductor channel layers, and first and second source/drain (S/D) features disposed on opposing sides of the gate structure. The first and second S/D features, the semiconductor channel l...