US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "RRAM device as physical unclonable function device and manufacturing method" (Taiwanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,462, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"RRAM device as physical unclonable function device and manufacturing method" was invented by Chung-Liang Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory array includes a plurality of memory cells. Each memory cell includes a gate all around transistor and a resistor device. The resistor device includes a first electrode including a plurality of conductive nanosheets. The resistor device includes a high-K resistive element surrounds the conductive nanosheets. The resistor device includes a seco...