US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 3 for "Multi-gate devices with multi-layer inner spacers and fabrication methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,640, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-gate devices with multi-layer inner spacers and fabrication methods thereof" was invented by Chih-Ching Wang (Kinmen County, Taiwan), Jon-Hsu Ho (New Taipei, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan), Chung-Wei Wu (Hsin-Chu County, Taiwan) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes semiconductor channel members disposed over a substrate, a gate dielectric layer disposed on and wrapping around the semiconductor channel members, a ga...