ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,667, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).
"In-situ straining epitaxial process" was invented by Hsiu-Ting Chen (Tainan City, Taiwan), Yi-Ming Huang (Tainan City, Taiwan), Shih-Chieh Chang (Taipei City, Taiwan), Hsing-Chi Chen (Hsin-Chu City, Taiwan) and Pei-Ren Jeng (Chu-Bei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an epitaxial straining region formed within a semiconductor substrate, the straining region being positioned adjacent to a gate stack, the gate stack being positioned above a channel. The straining region comprises a defect c...