ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,676, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"High voltage devices" was invented by Sung-Hsin Yang (Hsinchu, Taiwan), Jung-Chi Jeng (Tainan City, Taiwan) and Ru-Shang Hsiao (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a substrate including a core device region and an input/output (I/O) device region, a plurality of core devices in the core device region, each of the plurality of core devices including a first active region extending along a first dire...