ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,849, issued on March 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Hsin-Chu, Taiwan).
"Dam for three-dimensional integrated circuit" was invented by Tsung-Ding Wang (Tainan City, Taiwan), An-Jhih Su (Taoyuan City, Taiwan), Chien Ling Hwang (Hsinchu, Taiwan), Jung Wei Cheng (Hsinchu, Taiwan), Hsin-Yu Pan (Taipei, Taiwan) and Chen-Hua Yu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive mem...