US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "Backside source/drain contacts and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,648, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Backside source/drain contacts and methods of forming the same" was invented by Wei Hao Lu (Taoyuan, Taiwan), Li-Li Su (Chubei, Taiwan), Chien-I Kuo (Taibao, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Yu-Xuan Huang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an e...