US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,812, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same" was invented by Yun-Feng Kao (New Taipei, Taiwan) and Katherine H. Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment inverter circuit includes a first-conductivity-type semiconductor layer disposed over an interlayer dielectric layer, a gate electrode disposed over the first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer disposed over the gate electrode, a first gat...