US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Silicon layer-based silicide contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,230, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Silicon layer-based silicide contacts" was invented by Yi-He Tsai (Hsinchu, Taiwan), Yi-Hung Chang (Hsinchu, Taiwan), Lung Chen (Hsinchu, Taiwan) and Long-Jie Hong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor channel. The semiconductor device includes a metal gate structure disposed over the semiconductor channel. The semiconductor device includes a gate electrode having a bottom surface contacting an upper surface of the metal gate structure. The gate electrode has its side port...