US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Semiconductor structure including gate stack surrounding or wrapping around plurality of semiconductor layers or nanostructures and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,246, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure including gate stack surrounding or wrapping around plurality of semiconductor layers or nanostructures and method for forming the same" was invented by Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming an active region over a substrate. The active region includes a fin element and a plurality of first semiconductor layers and a plurality of second semiconductor layers which are alte...