ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,244, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor devices and methods of fabrication thereof" was invented by Cheng-Wei Chang (Taipei, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Chi-Yu Chou (Hsinchu, Taiwan) and Yueh-Ching Pai (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method of forming a contact opening using selective ALE operations to remove ILD layer along an upper profile of a source/drain region, and then form a source/drain contact feature having a concave bottom profile with increased contact area."...