US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,243, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Chih-Teng Liao (Hsinchu, Taiwan) and Yi-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain region, a second source/drain region adjacent the first source/drain region, an interlayer dielectric layer disposed between the first source/drain region and the second source/drain region, and a conductive feature disposed ...