US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Resistive memory device including a silicon oxide base spacer and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,429, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive memory device including a silicon oxide base spacer and methods for forming the same" was invented by Fu-Ting Sung (Yangmei City, Taiwan), Jhih-Bin Chen (Hsinchu, Taiwan), Hung-Shu Huang (Taichung City, Taiwan), Hong Ming Liu (Hsinchu City, Taiwan), Hsia-Wei Chen (Taipei City, Taiwan), Yu-Wen Liao (New Taipei City, Taiwan) and Wen-Ting Chu (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrou...