US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Multi-port SRAM cell with metal interconnect structures" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,182, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-port SRAM cell with metal interconnect structures" was invented by Ping-Wei Wang (Hsin-Chu, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan) and Jui-Lin Chen (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a device layer including a plurality of transistors and an interconnect structure disposed over the device layer. Each of the transistors includes a gate structure extending lengthwise in a first direction. The interconnect structure includes a bottommost metal line layer electrically coupl...