US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Method of manufacturing semiconductor structure with spacer on photoresist layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,439, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor structure with spacer on photoresist layer" was invented by Chin-Ta Chen (Hsinchu City, Taiwan), Han-Wei Wu (Tainan City, Taiwan), Yuan-Hsiang Lung (Hsinchu City, Taiwan) and Hua-Tai Lin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a dielectric layer over a semiconductor substrate; forming a first photoresist layer over the dielectric layer; patterning the first photoresist layer to form through holes, such that a first portion of the first photoresist...