US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Method of gap filling for semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,231, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of gap filling for semiconductor device" was invented by Te-Yang Lai (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a dielectric layer conformally over a plurality of fins on a substrate, forming a first high-k layer conformally over the dielectric layer, and forming a flowable oxide over the first high-k layer. Forming the flowable oxide includes filling first trenches adjacent fins of the ...