US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Method for forming via structure with low resistivity" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,237, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming via structure with low resistivity" was invented by Kuo-Chiang Tsai (Hsinchu City, Taiwan), Fu-Hsiang Su (Zhubei City, Taiwan), Ke-Jing Yu (Kaohsiung City, Taiwan), Chih-Hong Hwang (New Taipei City, Taiwan) and Jyh-Huei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a first insulating layer and first and second gate spacers in first and second openings of the first insulating layer, respectively, formin...