US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 24 for "Four-poly-pitch SRAM cell with backside metal tracks" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,180, issued on March 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Four-poly-pitch SRAM cell with backside metal tracks" was invented by Kuo-Hsiu Hsu (Taoyuan County, Taiwan), Feng-Ming Chang (Hsinchu County, Taiwan), Kian-Long Lim (Hsinchu City, Taiwan), Ping-Wei Wang (Hsin-Chu, Taiwan), Lien Jung Hung (Taipei, Taiwan) and Ruey-Wen Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an SRAM cell that includes first and second pull-up (PU) transistors, first and second pull-down (PD) transistors, and first and second pass-gate (PG) transistors. A source, a dr...