US Patent Issued to Taiwan Semiconductor Manufacturing on March 24 for "Field effect transistor with dual silicide and method" (Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,242, issued on March 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with dual silicide and method" was invented by Shih-Chuan Chiu (Hsinchu, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Cheng-Chi Chuang (Hsinchu, Taiwan), Yun Ju Fan (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a gate structure, a source/drain region, a first silicide layer, a second silicide layer and a contact. The gate structure wraps around at least one vertical stack of nanostructure channels. The source...