US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Semiconductor device including work function layer doped with barrier elements and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,876, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including work function layer doped with barrier elements and method for forming the same" was invented by Chia Chan Fan (Taichung City, Taiwan), Chung-Liang Cheng (Changhua County, Taiwan), Chin-Chia Yeh (Taichung City, Taiwan), Chieh Chiang (Taichung City, Taiwan) and Cheng Yu Pai (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a transistor region in a substrate; forming a gate dielectric...