ALEXANDRIA, Va., March 17 -- United States Patent no. 12,578,640, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photosensitive material for photoresist and lithography" was invented by Wei-Che Hsieh (Taipei, Taiwan), Yu-Chung Su (Hsinchu, Taiwan), Chia-Ching Chu (Hsinchu County, Taiwan), Tzu-Yi Wang (Hsinchu, Taiwan), Ta-Cheng Lien (Cyonglin Township, Taiwan), Hsin-Chang Lee (Zhubei, Taiwan), Ching-Yu Chang (Yuansun, Taiwan) and Yahru Cheng (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one mon...