US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Multi-gate semiconductor device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,689, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate semiconductor device and fabrication method thereof" was invented by Cheng-Wei Chang (Taipei City, Taiwan), Shahaji B. More (Hsinchu City, Taiwan) and Yi-Ying Liu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes alternately stacking first semiconductor layers and second semiconductor layers over a substrate, patterning the first and second semiconductor layers into a fin structure, forming a dielectric layer across the fin structure, and removing the fir...