ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,720, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Tzu-Ging Lin (Kaohsiung City, Taiwan), Chih-Chang Hung (Hsinchu, Taiwan) and Shun-Hui Yang (Taoyuan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a fin structure is formed. The fin structure includes a stacked layer of first semiconductor layers and second semiconductor layers disposed over a bottom fin structure, and a hard mask layer over the stacked layer. An isolation insulating l...