US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Method of forming semiconductor device with implanted nanosheets" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,690, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming semiconductor device with implanted nanosheets" was invented by Zhi-Ren Xiao (Hsinchu County, Taiwan), Nuo Xu (San Jose, Calif.) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers, ...