US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 17 for "Method for removing edge of substrate in semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,923, issued on March 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for removing edge of substrate in semiconductor structure" was invented by Kenichi Sano (Hsinchu, Taiwan), Chung-Liang Cheng (Hsinchu, Taiwan), De-Yang Chiou (Hsinchu, Taiwan), Kuan-Liang Liu (Hsinchu, Taiwan) and Pinyen Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semicon...