US Patent Issued to Taiwan Semiconductor Manufacturing on March 17 for "Memory device and method for fabricating the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,866, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method for fabricating the same" was invented by Nuo Xu (San Jose, Calif.), Yuan Hao Chang (Hsinchu County, Taiwan), Po-Sheng Lu (Hsinchu, Taiwan) and Zhiqiang Wu (Chubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MRAM cell block and a magnetic shielding structure for the MRAM cell block are incorporated into a metal interconnect of an integrated circuit (IC) device. The magnetic shielding structure may be provided by metallization layers and via layers having wires and vias that incorporate a magnetic shielding ...