ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,762, issued on March 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Enhanced trench isolation structure" was invented by Min-Ying Tsai (Kaohsiung City, Taiwan), Cheng-Te Lee (Chupei City, Taiwan), Rei-Lin Chu (Hsinchu City, Taiwan), Ching I Li (Tainan, Taiwan) and Chung-Yi Yu (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an image sensor comprising a substrate. A photodetector is in the substrate. A trench is in the substrate and is defined by sidewalls and an upper surface of the substrate. A first isolation layer extends along the sidewalls and the upper surf...