ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,039, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of forming the same" was invented by Yung-Chi Lin (New Taipei City, Taiwan), Ming-Tsu Chung (Hsinchu, Taiwan) and Yan-Zuo Tsai (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first die. The first die includes a first dielectric bonding layer thereon and a plurality of first dielectric bonding patterns in the first dielectric bonding layer. A composition of the first dielectric bonding patterns is different from a composition of the first dielectric bonding layer."...