ALEXANDRIA, Va., June 9 -- United States Patent no. 12,651,619, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory device" was invented by Chien-Yuan Chen (Hsinchu City, Taiwan), Hau-Tai Shieh (Hsinchu City, Taiwan) and Cheng Hung Lee (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell and an amplifier. The memory cell is configured to store a first data bit. The amplifier is configured to generate a first data signal at a first node according to the first data bit, and configured to charge the first node according to a precharge signal. After the first node is charged according to the precharg...