US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,306, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Yu-Lien Huang (Hsinchu County, Taiwan), Tze-Liang Lee (Hsinchu City, Taiwan), Jr-Hung Li (Hsinchu County, Taiwan), Chi-Hao Chang (Taoyuan City, Taiwan), Hao-Yu Chang (Taipei City, Taiwan) and Pei-Yu Chou (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a dummy gate structure across a fin protruding from a substrate, forming gate spacers on opposite sidewalls of the dummy gate structure, forming so...