ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,341, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nanosheet devices and methods of fabricating the same" was invented by Chia-Chung Chen (Hsinchu, Taiwan), Zi-Ang Su (Hsinchu County, Taiwan), Bo-Ting Chen (Hsinchu, Taiwan), Chung-Sheng Yuan (Hsinchu, Taiwan) and Yi-Kan Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and a stack of p-n junction structures embedded in the substrate. The semiconductor structure includes a semiconductor fin protruding from the substrate. The semiconductor structure includes a pair of source/drain st...